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參數(shù)資料
| 型號： | IRF9410 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)=0.030ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 0.030ohm） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 114K |
| 代理商： | IRF9410 |
IRF9410
Parameter
Min. Typ. Max. Units
30
–––
–––
0.024 –––
–––
0.024 0.030
–––
0.032 0.040
–––
0.037 0.050
1.0
–––
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
–––
2.4
–––
4.9
–––
7.3
–––
8.3
–––
23
–––
17
–––
550
–––
260
–––
100
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.0A
V
GS
= 5.0V, I
D
= 4.0A
V
GS
= 4.5V, I
D
= 3.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 15V, I
D
= 7.0A
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
V
GS
= 20V
V
GS
= -20V
I
D
= 2.0A
V
DS
= 15V
V
GS
= 10V, See Fig. 10
V
DD
= 25V
I
D
= 1.0A
R
G
= 6.0
,
V
GS
= 10V
R
D
= 25
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 9
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
2.0
25
100
-100
27
3.6
7.4
15
17
46
34
–––
–––
–––
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
ns
pF
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.0A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
0.78
40
63
1.0
80
130
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
37
2.8
A
S
D
G
Surface mounted on FR-4 board, t
≤
10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.6A, di/dt
≤
120A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 6.6mH
R
G
= 25
, I
AS
= 4.6A.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
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