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參數(shù)資料
| 型號(hào)： | IRF9410 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)=0.030ohm) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 0.030ohm） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | IRF9410 |
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1562A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings
( T
A
= 25°C Unless Otherwise Noted)
9/15/97
SO-8
V
DSS
= 30V
R
DS(on)
= 0.030
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
Surface Mount
l
Very Low Gate Charge and
Switching Losses
l
Fully Avalanche Rated
IRF9410
Description
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
Symbol
V
DS
V
GS
Maximum
30
± 20
7.0
5.8
37
2.8
2.5
1.6
70
4.2
0.25
5.0
-55 to + 150
Units
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C
T
A
= 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
I
DM
I
S
T
A
= 25°C
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Symbol
R
θ
JA
Limit
50
Units
Maximum Junction-to-Ambient
°C/W
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
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