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參數(shù)資料
| 型號(hào)： | IRFB18N50K |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）最大值\u003d 0.26ohm，身份證\u003d 27A條） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 83K |
| 代理商： | IRFB18N50K |
IRFB18N50K
3/29/01
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
500V
R
DS(on)
typ.
0.26
I
D
17A
Parameter
Max.
17
11
68
220
1.8
± 30
11
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
A
W
W/
°
C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°
C
10
N
Absolute Maximum Ratings
TO
-
220AB
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Circuits
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low R
DS(on)
Applications
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
370
17
22
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.50
–––
Max.
0.56
–––
58
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
PD - 93926B
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