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參數(shù)資料
| 型號(hào)： | IRFAG30 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| 中文描述： | 的HEXFET三極管通孔（TO-204AA/AE） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | IRFAG30 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS =0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
2.3
1.5
9.2
75
0.6
±20
110
2.3
7.5
1.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
PD -90622
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-204AA/AE)
IRFAG30
TRANSISTORS
01/24/01
www.irf.com
1
1000V, N-CHANNEL
TO-3
Product Summary
Part Number BVDSS R
DS(on)
IRFAG30 1000V 5.6
2.3Α
I
D
Features:
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
For footnotes refer to the last page
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