參數(shù)資料
型號： IRF6156
廠商： International Rectifier
英文描述： FlipFET Power MOSFET
中文描述： FlipFET功率MOSFET
文件頁數(shù)： 2/13頁
文件大?。?/td> 249K
代理商： IRF6156
2
www.irf.com
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%. Gate voltage applied to both gates.
When mounted on 1 inch square 2oz copper on FR-4.
Figures 1, 2 and 3: One Fet is biased with V
GS
= 9.0V and curves show response of the second FET.
See Fig.4.
Figures 5, 6 and 7: G1 and G2 are shorted. See Fig.9a&b.
The diode connected between the gate and source serves only as protection against ESD.
No gate over voltage rating is implied.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)SSS
Source-to-Source Breakdown Voltage
V
(BR)SSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
SS(on)
Static Source-to-Source On-Resistance –––
Min. Typ. Max. Units
20
–––
–––
16
27
–––
43
0.45
–––
18
–––
–––
–––
–––
–––
–––
50
–––
100
–––
8.0
–––
-8.0
–––
0.20
––– -0.20
–––
12
–––
1.6
–––
4.4
–––
8.0
–––
13
–––
33
–––
26
–––
950
–––
210
–––
150
–––
–––
Conditions
–––
–––
40
60
1.2
–––
1.0
25
–––
–––
20
-20
0.5
-0.5
18
2.4
6.6
–––
–––
–––
–––
–––
–––
–––
1.2
V
V
GS
=0V, I
S
=250μA,See Fig. 23a&b
mV/°C Reference to 25°C,I
S
=1mA,
Fig.23a&b
m
V
GS1,2
= 4.5V, I
S
= 6.5A
V
GS1,2
= 2.5V, I
S
= 5.2A
V
V
SS
= V
GS
, I
S
= 250μA
Fig. 10a&b
S
V
SS
= 10V, I
S
= 6.5A, See Fig. 4
μA
V
SS
= 20V, V
GS
= 0V,See Fig.23a&b
V
SS
= 16V, V
GS
= 0V, T
J
= 125°C
nA
V
SS
= 4.5V, V
GS
= 0V, TJ = 25°C
V
SS
= 4.5V, V
GS
= 0V, T
J
= 60°C
μA
V
GS
= 12V, See Fig. 22
V
GS
= -12V
μA
V
GS
= 4.5V
V
GS
= -4.5V
I
S
= 6.5A
nC
V
SS
= 16V
V
GS
= 5.0V, See Fig. 14a,b&c
V
SS
= 10V
ns
I
S
= 1.0A
R
G
= 3.0
V
GS
= 5.0V, See Fig. 21a,b&c
V
GS
= 0V
pF
V
SS
= 15V
= 1.0KHz, See Fig. 13a,b,c,d,e&f
V
See Fig. 17a&b
I
ss
= 2.5A
Fig.11a&b
V
GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
I
SSS
Zero Gate Voltage Source Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Miller Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-to-Source Diode Forward
Voltage, One Device On
Q
g
Q
gs
Q
G1-S2
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
ssf
相關(guān)PDF資料
PDF描述
IRF620 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N溝道增強(qiáng)型功率MOS場效應(yīng)管)
IRF6217 AC 6C 6#16S SKT PLUG
IRF630PBF HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A )
IRF630SPBF HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A )
IRF646 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF620 功能描述:MOSFET N-Chan 200V 5.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF620 制造商:STMicroelectronics 功能描述:MOSFET N TO-220
IRF620_R4941 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6201PBF 功能描述:MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6201TRPBF 功能描述:MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*