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參數(shù)資料
| 型號： | IRF530 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應管) |
| 中文描述： | 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | IRF530 |
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IRF530, RF1S530SM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF-530 | 制造商:International Rectifier 功能描述: |
| IRF530/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF530_R4941 | 功能描述:MOSFET USE 512-IRF530A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5305 | 功能描述:MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5305L | 功能描述:MOSFET P-CH 55V 31A TO-262 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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