參數(shù)資料
型號： IRF530
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應管)
中文描述： 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/7頁
文件大小： 76K
代理商： IRF530
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF530, RF1S530SM
100
100
14
10
56
±
20
79
0.53
69
-55 to 175
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
PARAMETER
TEST CONDITIONS
MIN
100
2
-
-
14
-
-
5.1
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
7.6
12
35
25
25
18
MAX
-
4.0
25
250
-
±
500
0.16
-
15
65
70
59
30
UNITS
V
V
μ
A
μ
A
A
nA
S
ns
ns
ns
ns
nC
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= 95V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
V
DS
> I
D(ON)
x r
DS(ON) MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 8.3A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
D
= 8.3A (Figure 12)
V
DD
= 50V, I
D
≈
14A, R
G
≈
12
, R
L
= 3.4
MOSFET Switching Times are Essentially
Independent of Operating Temperature
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
-
-
-
-
-
4
7
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
600
250
50
3.5
Measured from the
Contact Screw on Tab To
Center of Die
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
MeasuredfromtheSource
Lead, 6mm (0.25in) From
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θ
JC
R
θ
JA
R
θ
JA
-
-
-
-
-
-
1.9
62.5
62
o
C/W
o
C/W
o
C/W
Free Air Operation
RF1S540SM Mounted on FR-4 Board with
Minimum Mounting Pad
L
S
L
D
G
D
S
IRF530, RF1S530SM
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相關代理商/技術參數(shù)
參數(shù)描述
IRF-530 制造商:International Rectifier 功能描述:
IRF530/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement-Mode Silicon Gate
IRF530_R4941 功能描述:MOSFET USE 512-IRF530A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF5305 功能描述:MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF5305L 功能描述:MOSFET P-CH 55V 31A TO-262 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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