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參數(shù)資料
| 型號： | IRF530 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 76K |
| 代理商： | IRF530 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
1
I
D
,
10
2
10
2
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= 175
o
C
SINGLE PULSE
100
μ
s
10
μ
s
1ms
10ms
10
3
1
10
3
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
0
10
20
30
40
5
10
15
20
25
50
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 8V
0
5
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
5
10
15
I
D
,
V
GS
= 6V
V
GS
= 10V
20
4
V
GS
= 4V
V
GS
= 7V
V
GS
= 5V
25
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.1
1
10
I
D
,
100
25
o
C
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
0
0.6
0.9
1.2
12
24
36
48
r
D
,
)
I
D
, DRAIN CURRENT (A)
60
1.5
0
0.3
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140 160 180
2.4
80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 14A
IRF530, RF1S530SM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF-530 | 制造商:International Rectifier 功能描述: |
| IRF530/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement-Mode Silicon Gate |
| IRF530_R4941 | 功能描述:MOSFET USE 512-IRF530A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5305 | 功能描述:MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF5305L | 功能描述:MOSFET P-CH 55V 31A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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