參數(shù)資料
型號(hào)： IKW08T120
英文描述： ?8A 1200V TO247 IGBT+Diode?
中文描述： ？8A條1200伏TO247 IGBT的二極管？
文件頁(yè)數(shù)： 3/15頁(yè)
文件大?。?/td> 448K
代理商： IKW08T120
IKW08T120
^
TrenchStop Series
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
600
36
28
53
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=8A
V
GE
=15V
TO-247AC
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
-
13
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
= 600V,
T
j
= 25
°
C
-
48
-
A
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
40
23
450
70
0.67
0.7
1.37
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=600V,
I
C
=8A,
V
GE
=-15/15V,
R
G
=81
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
80
1.0
13
420
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=25
°
C,
V
R
=600V,
I
F
=8A,
di
F
/dt
=600A/
μ
s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKW08T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW08T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3
IKW15N120H3 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW15N120H3FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 217W TO247-3
IKW15N120H3XK 制造商:Infineon Technologies AG 功能描述:
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