參數(shù)資料
型號: IKW08T120
英文描述: ?8A 1200V TO247 IGBT+Diode?
中文描述: ?8A條1200伏TO247 IGBT的二極管?
文件頁數(shù): 11/15頁
文件大小: 448K
代理商: IKW08T120
IKW08T120
^
TrenchStop Series
Power Semiconductors
11
Preliminary / Rev. 1 Jul-02
t
r
,
R
200A/μs
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=600V,
I
F
=8A,
Dynamic test circuit in Figure E)
400A/μs
600A/μs
800A/μs
0ns
100ns
200ns
300ns
400ns
500ns
T
J
=25°C
T
J
=150°C
Q
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0μC
1μC
2μC
T
J
=25°C
T
J
=150°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
=600V,
I
F
=8A,
Dynamic test circuit in Figure E)
I
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0A
5A
10A
15A
20A
25A
T
J
=25°C
T
J
=150°C
d
r
/
,
D
O
200A/μs
400A/μs
600A/μs
800A/μs
-0A/μs
-100A/μs
-200A/μs
-300A/μs
-400A/μs
-500A/μs
-600A/μs
T
J
=25°C
T
J
=150°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(
V
R
=600V,
I
F
=8A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(
V
R
=600V,
I
F
=8A,
Dynamic test circuit in Figure E)
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