參數(shù)資料
型號(hào): IGW60T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss IGBT in Trench and Fieldstop technology
中文描述: 在戴低損失和場(chǎng)終止IGBT技術(shù)
文件頁(yè)數(shù): 9/12頁(yè)
文件大小: 416K
代理商: IGW60T120
IGW60T120
^
TrenchStop Series
Power Semiconductors
9
Preliminary / Rev. 1 Jul-02
V
C
,
C
-
E
0V
200V
400V
600V
0A
30A
60A
90A
1.5us
1us
0.5us
0us
I
C
V
CE
I
C
,
C
0V
200V
400V
600V
0A
30A
60A
90A
1.5us
1us
0.5us
0us
I
C
V
CE
t
,
TIME
t
,
TIME
Figure 21. Typical turn on behavior
(V
GE
=0/15V,
R
G
=10
,
T
j
= 150
°
C,
Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior
(V
GE
=15/0V,
R
G
=10
,
T
j
= 150
°
C,
Dynamic test circuit in Figure E)
Z
t
,
T
10μs
100μs
1ms
10ms
100ms
10
-3
K/W
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(
D = t
p
/
T
)
R
,(K/W )
0.2003
0.0776
0.0469
0.0053
τ
,
(s)
=
7.98*10
-2
3.86*10
-3
4.44*10
-4
4.87*10
-5
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
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