參數(shù)資料
型號： IGW60T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss IGBT in Trench and Fieldstop technology
中文描述： 在戴低損失和場終止IGBT技術
文件頁數(shù)： 3/12頁
文件大?。?/td> 416K
代理商： IGW60T120
IGW60T120
^
TrenchStop Series
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
3700
180
150
280
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=60A
V
GE
=15V
TO-247AC
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
-
13
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
= 600V,
T
j
= 25
°
C
-
300
-
A
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
50
44
480
80
4.3
5.2
9.5
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=600V,
I
C
=60A,
V
GE
=0/15V,
R
G
=10
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
50
45
600
130
6.4
9.4
15.8
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=600V,
I
C
=60A,
V
GE
=0/15V,
R
G
= 10
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關代理商/技術參數(shù)
參數(shù)描述
IGW60T120_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop and Fieldstop technology
IGW60T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 100A 375W TO247-3
IGW75N60H3 制造商:Infineon Technologies AG 功能描述: 制造商:Infineon Technologies AG 功能描述:IGBT 600V 140A 428W TO247-3
IGW75N60H3FKSA1 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 140A 428W TO247-3
IGW75N60T 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 75A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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