參數(shù)資料
型號(hào)： IGW03N120H2
廠(chǎng)商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology
中文描述： 高速2 -技術(shù)
文件頁(yè)數(shù)： 3/13頁(yè)
文件大小： 397K
代理商： IGW03N120H2
IGP03N120H2,
IGW03N120H2
IGB03N120H2
Power Semiconductors
3
Rev. 2, Mar-04
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.2
5.2
281
29
0.14
0.15
0.29
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
9.4
6.7
340
63
0.22
0.26
0.48
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Switching Energy ZVT, Inductive Load
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-off energy
E
off
V
CC
=800V,
I
C
=3A,
V
GE
=15V/0V,
R
G
=82
,
C
r
T
j
=25
°
C
T
j
=150
°
C
2)
=4nF
-
-
0.05
0.09
-
-
mJ
2)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
3)
Commutation diode from device IKP03N120H2
相關(guān)PDF資料
PDF描述
IGB30N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP06N60T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IGP10N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP15N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP30N60T LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IGW03N120H2FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO247-3
IGW08T120 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGW08T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3
IGW100N60H3 制造商:Infineon Technologies AG 功能描述:
IGW100N60H3FKSA1 制造商:Infineon Technologies AG 功能描述:IGW100N60H3XK 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*