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參數(shù)資料
| 型號(hào)： | IGP30N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰(zhàn)壕和FILEDSTOP技術(shù) |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 378K |
| 代理商： | IGP30N60T |
TrenchStop Series
IGP30N60T
IGW30N60T
Power Semiconductors
8
Rev. 2.2 Dec-04
V
G
,
G
-
E
0nC
30nC
60nC
90nC 120nC 150nC 180nC
0V
5V
10V
15V
480V
120V
c
C
0V
10V
20V
30V
40V
100pF
1nF
C
rss
C
oss
C
iss
Q
GE
,
GATE CHARGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(
V
GE
=0V,
f
= 1 MHz)
Figure 17. Typical gate charge
(
I
C
=30 A)
I
C
,
C
12V
14V
16V
18V
0A
100A
200A
300A
400A
t
S
,
S
10V
11V
12V
13V
14V
0μs
2μs
4μs
6μs
8μs
10μs
12μs
V
GE
,
GATE
-
EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(
V
CE
≤
400V,
T
j
≤
150
°
C)
V
GE
,
GATE
-
EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
=600V
,
start at
T
J
=
25°C,
T
Jmax
<150°C)
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