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參數(shù)資料
| 型號： | IGP30N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰(zhàn)壕和FILEDSTOP技術 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 378K |
| 代理商： | IGP30N60T |
TrenchStop Series
IGP30N60T
IGW30N60T
Power Semiconductors
5
Rev. 2.2 Dec-04
I
C
,
C
0V
1V
2V
3V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
7V
9V
11V
13V
V
GE
=20V
I
C
,
C
0V
1V
2V
3V
0A
10A
20A
30A
40A
50A
15V
13V
7V
9V
11V
V
GE
=20V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(
T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(
T
j
= 175°C)
I
C
,
C
0V
2V
4V
6V
8V
0A
10A
20A
30A
40A
50A
25°C
T
J
=175°C
V
C
C
-
E
0°C
50°C
100°C
150°C
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
I
C
=30A
I
C
=60A
I
C
=15A
V
GE
,
GATE-EMITTER
VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(
V
GE
= 15V)
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