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參數資料
| 型號： | IGP30N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰(zhàn)壕和FILEDSTOP技術 |
| 文件頁數： | 4/12頁 |
| 文件大?。?/td> | 378K |
| 代理商： | IGP30N60T |
TrenchStop Series
IGP30N60T
IGW30N60T
Power Semiconductors
4
Rev. 2.2 Dec-04
I
C
,
C
100Hz
1kHz
10kHz
100kHz
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
0.1A
1A
10A
100A
10μs
1ms
DC
t
p
=2μs
50μs
10ms
f
,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(
T
j
≤
175
°
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 10
)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
175
°
C;
V
GE
=15V)
P
t
,
P
25°C
50°C
75°C
100°C 125°C 150°C
0W
40W
80W
120W
160W
I
C
,
C
25°C
75°C
125°C
0A
10A
20A
30A
40A
50A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(
T
j
≤
175
°
C)
Figure 4. Collector current as a function of
case temperature
(
V
GE
≥
15V,
T
j
≤
175
°
C)
I
c
I
c
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