- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383099 > IGW08T120 (Electronic Theatre Controls, Inc.) Low Loss IGBT in Trench and Fieldstop technology PDF資料下載
參數(shù)資料
| 型號(hào)： | IGW08T120 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Loss IGBT in Trench and Fieldstop technology |
| 中文描述： | 在戴低損失和場(chǎng)終止IGBT技術(shù) |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 302K |
| 代理商： | IGW08T120 |
Preliminary
TrenchStoP Series
IGW08T120
Low Loss IGBT in Trench and Fieldstop
technology
Approx. 1.0V reduced V
CE(sat)
compared to BUP305D
Short circuit withstand time – 10
μ
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
Power Semiconductors
1
Preliminary / Rev. 1 Sep-03
G
C
E
V
CE(sat
),Tj=25°C
T
j,max
Package
Ordering Code
IGW08T120
1200V
8A
1.7V
150
°
C
TO-247AC
Q67040-S4513
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
16
8
V
A
I
Cpuls
-
24
24
I
F
16
8
V
GE
t
SC
±
20
10
V
μ
s
P
tot
70
W
T
j
T
stg
-
-40...+150
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IGW40T120 | Low Loss IGBT in Trench and Fieldstop technology |
| IGW60T120 | Low Loss IGBT in Trench and Fieldstop technology |
| IH5011MPD | Virtual Ground Analog Switch |
| IH5010MPA | Virtual Ground Analog Switch |
| IH5020MPA | Virtual Ground Analog Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IGW08T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3 |
| IGW100N60H3 | 制造商:Infineon Technologies AG 功能描述: |
| IGW100N60H3FKSA1 | 制造商:Infineon Technologies AG 功能描述:IGW100N60H3XK 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube |
| IGW15N120H3 | 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IGW15N120H3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 30A 217W TO247-3 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。