參數(shù)資料
型號： IGP06N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
中文描述： 低損耗DuoPack：在TrenchStop和場終止IGBT技術(shù)
文件頁數(shù)： 7/12頁
文件大?。?/td> 330K
代理商： IGP06N60T
IGP06N60T
TrenchStop Series
q
Power Semiconductors
7
Rev. 2.1 June 06
E
,
S
0A
2A
4A
6A
8A
10A
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
0,5 mJ
0,6 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
10
30
55
80
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=175°C,
V
CE
=400V, V
GE
=0/15V,
R
G
=23
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 6A,
Dynamic test circuit in Figure E)
E
,
S
50°C
100°C
150°C
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
200V
300V
400V
500V
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=400V,
V
GE
= 0/15V,
I
C
= 6A,
R
G
= 23
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 6A,
R
G
= 23
,
Dynamic test circuit in Figure E)
相關(guān)PDF資料
PDF描述
IGP10N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP15N60T Low Loss IGBT in TrenchStop and Fieldstop technology
IGP30N60T LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
IGW08T120 Low Loss IGBT in Trench and Fieldstop technology
IGW40T120 Low Loss IGBT in Trench and Fieldstop technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IGP06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO220-3
IGP10N60T 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IGP10N60T_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop and Fieldstop technology
IGP10N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 110W TO220-3
IGP15N60T 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*