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參數(shù)資料
| 型號(hào)： | IGB30N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss IGBT in TrenchStop and Fieldstop technology |
| 中文描述： | 低TrenchStop損失和場(chǎng)終止IGBT技術(shù) |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 358K |
| 代理商： | IGB30N60T |
TrenchStop Series
IGB30N60T
q
Power Semiconductors
7
Rev. 2.1 June 06
E
,
S
0A
10A
20A
30A
40A
50A
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
10
20
30
40
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 10
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 30A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 30A,
R
G
= 10
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 30A,
R
G
= 10
,
Dynamic test circuit in Figure E)
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| IGB30N60T_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop technology |
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| IGB50N60T | 功能描述:IGBT 晶體管 LOW LOSS IGBT TECH 600V 50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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