參數(shù)資料
型號(hào): IGA03N120H2
廠商: INFINEON TECHNOLOGIES AG
英文描述: HighSpeed 2-Technology
中文描述: 高速2 -技術(shù)
文件頁(yè)數(shù): 8/10頁(yè)
文件大?。?/td> 201K
代理商: IGA03N120H2
IGA03N120H2
Power Semiconductors
8
Mar-04, Rev. 2.0
C
,
C
0V
10V
20V
30V
10pF
100pF
1nF
C
rss
C
oss
C
iss
V
G
,
G
-
E
0nC
10nC
20nC
30nC
0V
5V
10V
15V
20V
U
CE
=240V
U
CE
=960V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
Q
GE
,
GATE CHARGE
Figure 18. Typical gate charge
(
I
C
= 3A)
Z
t
,
T
1μs 10μs100μs 1ms 10ms100ms 1s
t
P
,
PULSE WIDTH
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
P
/
T
)
10s
10
-2
K/W
10
-1
K/W
10
0
K/W
10
1
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
R
,(K/W )
1,4285
1,8838
0,4057
0,4234
0,3241
0,1021
0,1340
τ
,
(s)
5,2404
1,7688
0,07592
0,005018
0,000595
0,000126
0,000018
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
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