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| 型號： | IC42S32200 |
| 英文描述： | RES 1M-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA |
| 中文描述： | 為512k字× 32位× 4銀行（64兆位）同步動態(tài)RAM |
| 文件頁數(shù)： | 22/62頁 |
| 文件大?。?/td> | 900K |
| 代理商： | IC42S32200 |
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IC42S32200
IC42S32200L
22
Integrated Circuit Solution Inc.
DR036-0D 02/04/2005
- 6/7/8
Symbol
t
RC
A.C. Parameter
Min.
Max.
Unit
Note
Row cycle time
(same bank)
Row activate to row activate delay
(different banks)
RAS# to CAS# delay
(same bank)
Precharge to refresh/row activate command
(same bank)
Row activate to precharge time
(same bank)
Clock cycle time
60/70/80
9
t
RRD
12/14/16
9
t
RCD
18/21/24
9
t
RP
18/21/24
9
t
RAS
42/49/56
100,000
9
t
CK2
t
CK3
t
AC2
CL* = 2
CL* = 3
CL* = 2
- / - /10
6/7/8
ns
Access time from CLK
- / - /8
9
t
AC3
t
OH
(positive edge)
Data output hold time
CL* = 3
5.5/5.5/6
2/2.5/2.5
9
t
CH
Clock high time
2/3/3
10
t
CL
Clock low time
2/3/3
10
t
IS
Data/Address/Control Input set-up time
1.5/1.75/2
10
t
IH
Data/Address/Control Input hold time
1
10
t
LZ
Data output low impedance
1
9
8
t
HZ
t
DAL
Data output high impedance
Input data to active/refresh command
delay time (During Auto-precharge)
Exit self refresh and active command
Auto refresh Period
Refresh cycle time(4096)
Write Recovery Time
CAS# to CAS# Delay time
Mode Register Set cycle time
CKE to clock enable or power down exit
setup mode
5.5/5.5/6
* CL is CAS# Latency.
2CLK+t
RP
t
SRX
t
RFC
t
REF
t
WR
t
CCD
t
MRS
t
PDE
70
64
60/70/80
ms
2
1
CLK
2
1
Electrical Characteristics and Recommended A.C.Operating Conditions
(VDD =3.3V
±
0.3V,Ta =0~70 C)(Note:5,6,7,8)
Note:
1. Stress greater than those listed under “Absolute Maximum Ratings”may cause permanent damage to the device.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of
tCK and tRC.Input signals are changed one time during tCK.
4. These parameters depend on the output loading.Specified values are obtained with the output open.
5. Power-up sequence is described in Note 11.
相關(guān)PDF資料 |
PDF描述 |
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| IC42S32200L | 512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32202L-8BIG | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S32202-7B | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S32202-7BI | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S32202-7T | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S32200/L-6B | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6BG | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6BI | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6BIG | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6T | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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