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參數(shù)資料
| 型號： | IC42S32200 |
| 英文描述： | RES 1M-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA |
| 中文描述： | 為512k字× 32位× 4銀行（64兆位）同步動態(tài)RAM |
| 文件頁數(shù)： | 11/62頁 |
| 文件大?。?/td> | 900K |
| 代理商： | IC42S32200 |
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IC42S32200
IC42S32200L
Integrated Circuit Solution Inc.
DR036-0D 02/04/2005
11
Read to Precharge (CAS#Latency =2,3)
5
Write command
(RAS#=”H”,CAS#=”L”,WE#=”L”,BS =Bank,A10 =”L”,A0-A7 =Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active
bank.The bank must be active for at least tRCD(min.)before the Write command is issued.During write bursts,
the first valid data-in element will be registered coincident with the Write command.Subsequent data elements
will be registered on each successive positive clock edge (refer to the following figure).The DQs remain with high-
impedance at the end of the burst unless another command is initiated.The burst length and burst sequence are
determined by the mode register,which is already programmed.A full-page burst will continue until terminated (at
the end of the page it will wrap to column 0 and continue).
CLK
COMMAND
READ A
NOP
NOP
NOP
NOP
Activate
NOP
NOP
Precharge
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
ADDRESS
t
RP
Bank,
Col A
Bank(s)
Row
CAS# latency=2
tCK2, DQs
CAS# latency=3
tCK3, DQs
T0
T2
T1
T3
T4
T5
T6
T7
T8
Bank,
CLK
COMMAND
DIN A 3
NOP
WRITEA
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DIN A 0
DIN A 1
DIN A 2
DQ0 - DQ3
The first data element and the write
are registered on the same clock edge.
Burst Write Operation (Burst Length =4,CAS#Latency =2,3)
Extra data is masked.
don’t care
T0
T2
T1
T3
T4
T5
T6
T7
T8
A write burst without the AutoPrecharge function may be interrupted by a subsequent Write, BankPrecharge/
PrechargeAll,or Read command before the end of the burst length.An interrupt coming from Write command can
occur on any clock cycle following the previous Write command (refer to the following figure).
相關(guān)PDF資料 |
PDF描述 |
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| IC42S32200L | 512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32202L-8BIG | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S32202-7B | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S32202-7BI | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
| IC42S32202-7T | 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IC42S32200/L-6B | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6BG | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6BI | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6BIG | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S32200/L-6T | 制造商:ICS 制造商全稱:ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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