參數(shù)資料
型號(hào): IC42S32200
英文描述: RES 1M-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
中文描述: 為512k字× 32位× 4銀行(64兆位)同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 10/62頁(yè)
文件大?。?/td> 900K
代理商: IC42S32200
IC42S32200
IC42S32200L
10
Integrated Circuit Solution Inc.
DR036-0D 02/04/2005
READ A
NOP
NOP
NOP
NOP
WRITE B
NOP
NOP
DQM
COMMAND
DQ’s
NOP
DOUT A
DINB2
DINB1
DINB0
Must be Hi-Z before
the Write Command
: "H" or "L"
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND
NOP
NOP
NOP
NOP
NOP
BANKA
ACTIVAT E
DIN A 0
DIN A 1
DIN A 2
DIN A 3
1 Clk Interval
CAS# latency=2
tCK2, DQs
READ A
WRITEA
: "H" or "L"
NOP
T0
T2
T1
T3
T4
T5
T6
T7
T8
CLK
DQM
COMMAND
NOP
READ A
NOP
NOP
NOP
NOP
DIN B0
DIN B1
DIN B2
DIN B3
CAS# latency=2
tCK2, DQ’s
NOP
NOP
: "H" or "L"
T0
T2
T1
T3
T4
T5
T6
T7
T8
WRITEB
Read to Write Interval (Burst Length = 4,CAS#Latency =3)
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank.The following figure shows the optimum time that
BankPrecharge/PrechargeAll command is issued in different CAS#latency.
相關(guān)PDF資料
PDF描述
IC42S32200L 512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S32202L-8BIG 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
IC42S32202-7B 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
IC42S32202-7BI 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
IC42S32202-7T 512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
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IC42S32200/L-6BG 制造商:ICS 制造商全稱(chēng):ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S32200/L-6BI 制造商:ICS 制造商全稱(chēng):ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S32200/L-6BIG 制造商:ICS 制造商全稱(chēng):ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S32200/L-6T 制造商:ICS 制造商全稱(chēng):ICS 功能描述:512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM