參數(shù)資料
型號: IBMN364404CT3C-75A
英文描述: x4 SDRAM
中文描述: x4內(nèi)存
文件頁數(shù): 38/71頁
文件大?。?/td> 1251K
代理商: IBMN364404CT3C-75A
IBMN364164
IBMN364404
64Mb Synchronous DRAM - Die Revision C
IBMN364804
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 38 of 71
19L3265.E35856B
1/01
DC Electrical Characteristics
(T
A
= 0 to +70
°
C, V
DD
= 3.3V
±
0.3V)
Symbol
Parameter
Min.
Max.
Units
I
I(L)
Input Leakage Current, any input
(0.0V
V
IN
V
DD
), All Other Pins Not Under Test = 0V
-1
+1
μ
A
I
O(L)
Output Leakage Current
(D
OUT
is disabled, 0.0V
V
OUT
V
DDQ
)
-1
+1
μ
A
V
OH
Output Level (LVTTL)
Output “H” Level Voltage (
IOUT
= -2.0mA)
2.4
V
V
OL
Output Level (LVTTL)
Output “L” Level Voltage (I
OUT
= +2.0mA)
0.4
V
DC Output Load Circuit
Output
1200
50pF
3.3 V
870
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
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