參數(shù)資料
型號: HYB5117805BSJ-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 2M x 8-Bit Dynamic RAM 2k Refresh
中文描述: 2M X 8 EDO DRAM, 60 ns, PDSO28
封裝: 0.400 INCH, PLASTIC, SOJ-28
文件頁數(shù): 9/25頁
文件大小: 258K
代理商: HYB5117805BSJ-60
Semiconductor Group
9
HYB5117805BSJ-50/-60/-70
2M x 8-EDO DRAM
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read-
write cycle time
t
PRWC
58
68
77
ns
CAS precharge to WE
t
CPWD
41
49
56
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
10
10
10
ns
CAS hold time
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Write to RAS precharge time
10
10
10
ns
Write hold time referenced to RAS
t
WRH
10
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time (CAS-
before-RAS counter test cycle)
t
CPT
35
40
40
ns
Self Refresh Cycle
RAS pulse width
t
RASS
t
RPS
t
CHS
100k
100k
100k
ns
17
RAS precharge time
95
110
130
ns
17
CAS hold time
-50
-50
-50
ns
17
Test Mode
Write command setup time
t
WTS
t
WTH
t
CHRT
10
10
10
ns
Write command hold time
10
10
10
ns
CAS hold time
30
30
30
ns
AC Characteristics
(cont’d)
5)6)
16E
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
相關PDF資料
PDF描述
HYB5118160BSJ-50 1M x 16-Bit Dynamic RAM
HYB5118160BSJ-70 1M x 16-Bit Dynamic RAM
HYB5118160BSJ-60 1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BJ-60 RES 10.0-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
HYB5118165BSJ-60 1M x 16-Bit Dynamic RAM 1k Refresh
相關代理商/技術參數(shù)
參數(shù)描述
HYB5118160BSJ50 制造商:SIEMENS 功能描述:*
HYB5118160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM
HYB5118160BSJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM