參數(shù)資料
型號: HYB5117805BSJ-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 2M x 8-Bit Dynamic RAM 2k Refresh
中文描述: 2M X 8 EDO DRAM, 60 ns, PDSO28
封裝: 0.400 INCH, PLASTIC, SOJ-28
文件頁數(shù): 2/25頁
文件大小: 258K
代理商: HYB5117805BSJ-60
Semiconductor Group
2
HYB5117805BSJ-50/-60/-70
2M x 8-EDO DRAM
The HYB 5117805BSJ is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB
5117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced
circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 5117805BSJ to be packaged in a standard SOJ 28
plastic package with 400 mil width. These packages provide high system bit densities and are
compatible with commonly used automatic testing and insertion equipment. System-oriented
features include single + 5 V (
±
10 %) power supply, direct interfacing with high-performance logic
device families such as Schottky TTL.
Ordering Information
Pin Names
Type
Ordering Code
Package
Descriptions
HYB 5117805BJ-50
Q67100-Q1104
P-SOJ-28-3 400 mil
DRAM (access time 50 ns)
HYB 5117805BJ-60
Q67100-Q1105
P-SOJ-28-3 400 mil
DRAM (access time 60 ns)
HYB 5117805BJ-70
Q67100-Q1106
P-SOJ-28-3 400 mil
DRAM (access time 70 ns)
A0-A10
Row Address Inputs
A0-A9
Column Address Inputs
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O8
Data Input/Output
CAS
Column Address Strobe
WE
V
CC
V
SS
N.C.
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
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HYB5118160BSJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM