參數(shù)資料
型號(hào)： HYB39S13620TQ-
廠商： SIEMENS AG
英文描述： 128 x 64 pixel format, LED Backlight available
中文描述： 特別模式寄存器雙色登記突發(fā)讀單寫(xiě)操作
文件頁(yè)數(shù)： 23/70頁(yè)
文件大小： 563K
代理商： HYB39S13620TQ-
HYB 39S16320TQ-6/-7/-8
Semiconductor Group
23
1998-10-01
Electrical Characteristics
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70
°
C
Storage temperature range..................................................................................... – 55 to + 150
°
C
Input/output voltage .......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power supply voltage
V
DD
/
V
DDQ
............................................................................... – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
–2.0 V for pulse width < 4 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input low voltage
Output high voltage (
I
OUT
= – 2.0 mA)
Output low voltage (
I
OUT
= 2.0 mA)
Input leakage current, any input
(0 V <
V
IN
< 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
–
V
–
0.4
V
μ
A
– 5
5
I
O(L)
– 5
5
μ
A
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