參數(shù)資料
型號: HYB39S13620TQ-
廠商: SIEMENS AG
英文描述: 128 x 64 pixel format, LED Backlight available
中文描述: 特別模式寄存器雙色登記突發(fā)讀單寫操作
文件頁數(shù): 2/70頁
文件大?。?/td> 563K
代理商: HYB39S13620TQ-
HYB 39S16320TQ-6/-7/-8
Semiconductor Group
2
1998-10-01
functions. By having a programmable Mode register and Special Mode register, the system can
select the best suitable modes to maximize its performance.
Operating the two memory banks in an interleave fashion allows random access operation to occur
at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to
143 MHz is possible depending on burst length, CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported.
These devices operate with a single 3.3 V
package.
±
0.3 V power supply and are available in 100 pin TQFP
Ordering Information
Features
All signals fully synchronous to the positiv edge of the system clock
Programmable burst lengths: 1, 2, 4, 8 or full page
Burst data transfer in sequential or interleaved order
Burst read with single write
Programmable CAS latency: 2, 3
8 column block write and write-per-bit modes
Independent byte operation via DQM 0
3 interface
Auto precharge and auto refresh modes
2k refresh cycles/32 ms
LVTTL compatible I/O
Hidden auto precharge for read bursts
Type
Ordering Code
Package
Description
SDR LVTTL-Version
HYB 39S16320TQ-6
on request
TQFP-100-1
256k
×
×
×
×
2
×
×
×
×
32 SGRAM
HYB 39S16320TQ-7
on request
TQFP-100-1
256k
2
32 SGRAM
HYB 39S16320TQ-8
on request
TQFP-100-1
256k
2
32 SGRAM
HYB 39S16320TQ-10
on request
TQFP-100-1
256k
2
32 SGRAM
相關(guān)PDF資料
PDF描述
HYB39S16320TQ-10 128 x 64 pixel format, LED Backlight available
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