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參數(shù)資料
| 型號(hào)： | HYB3116160BSJ |
| 廠商： | SIEMENS AG |
| 英文描述： | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
| 中文描述： | 100萬(wàn)× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器經(jīng)銷(xiāo)商 |
| 文件頁(yè)數(shù)： | 8/25頁(yè) |
| 文件大小： | 258K |
| 代理商： | HYB3116160BSJ |
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Semiconductor Group
8
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
AC Characteristics
5)6)
16F
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
90
–
110
–
130
–
ns
RAS precharge time
30
–
40
–
50
–
ns
RAS pulse width
50
10k
60
10k
70
10k
ns
CAS pulse width
13
10k
15
10k
20
10k
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
Column address setup time
8
0
–
–
10
0
–
–
10
0
–
–
ns
ns
Column address hold time
10
–
15
–
15
–
ns
RAS to CAS delay time
18
37
20
45
20
50
RAS to column address delay
time
13
25
15
30
15
35
ns
RAS hold time
CAS hold time
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
t
REF
13
50
15
60
–
–
20
70
–
–
ns
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
3
50
3
50
3
50
ns
7
Refresh period for HYB3118160
–
16
–
16
–
16
ms
Refresh period for HYB3116160
–
64
–
64
–
64
ms
Refresh period for L-versions
–
256
–
256
–
256
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
–
50
–
60
–
70
ns
8, 9
Access time from CAS
–
13
–
15
–
20
ns
8, 9
Access time from column address
t
AA
OE access time
–
25
–
30
–
35
ns
8,10
t
OEA
–
13
–
15
–
20
ns
Column address to RAS lead time
t
RAL
Read command setup time
25
–
30
–
35
–
ns
t
RCS
t
RCH
t
RRH
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
0
–
0
–
0
–
ns
11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3116160BST-50 | RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
| HYB3118160BST-50 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-60 | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-60 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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