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參數(shù)資料
| 型號(hào)： | HYB3116160BSJ |
| 廠商： | SIEMENS AG |
| 英文描述： | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
| 中文描述： | 100萬× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器經(jīng)銷商 |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 258K |
| 代理商： | HYB3116160BSJ |
Semiconductor Group
6
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Soldering time.............................................................................................................................10 s
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage..................................................................................................-0.5 V to 4.6 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics (values in brackets for HYB3116160BSJ)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
2.0
max.
Vcc+0.5
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
V
1)
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
CMOS Output low voltage (
I
OUT
= 100
μ
A)
Input leakage current,any input
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
1)
Vcc-0.2
–
V
1)
–
0.2
V
μ
A
1)
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.
)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
I
CC1
–
–
–
200(100)
180 (90)
160 (80)
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
–
2
mA
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3116160BST-50 | RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
| HYB3118160BST-50 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-60 | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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