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參數(shù)資料
| 型號： | HYB3116160BSJ |
| 廠商： | SIEMENS AG |
| 英文描述： | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
| 中文描述： | 100萬× 16位動態(tài)隨機存儲器經(jīng)銷商 |
| 文件頁數(shù)： | 7/25頁 |
| 文件大?。?/td> | 258K |
| 代理商： | HYB3116160BSJ |
Semiconductor Group
7
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
Average
V
CC
supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
(RAS cycling: CAS =
V
IH
,
t
RC
=
t
RC
min.
)
Average
V
CC
supply current,
during fast page mode:
I
CC3
–
–
–
200(100)
180 (90)
160 (80)
mA
mA
mA
2) 4)
2) 4)
2) 4)
-50 ns version
-60 ns version
-70 ns version
(RAS =
V
IL
, CAS, address cycling,
t
PC
=
t
PC
min.
)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Standby
V
CC
supply current (L-version)
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current, during CAS-
before-RAS refresh mode: -50 ns version
I
CC4
–
–
–
55 (40)
50 (35)
45 (30)
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
I
CC5
–
1
mA
1)
I
CC5
–
200
μ
A
1)
-60 ns version
-70 ns version
(RAS, CAS cycling,
t
RC
=
t
RC
min.)
Average Self Refresh Current
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc--0.2V or 0.2V)
I
CC6
–
–
–
200(100)
180 (90)
160 (80)
mA
mA
mA
2) 4)
2) 4)
2) 4)
I
CC7
_
1
250
mA
μ
A
L-version
Capacitance
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11)
C
I1
C
I2
C
IO
–
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE)
–
7
pF
I/O capacitance (I/O1-I/O16)
–
7
pF
DC Characteristics (values in brackets for HYB3116160BSJ)
(cont’d)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3116160BST-50 | RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
| HYB3118160BST-50 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BSJ-60 | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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