參數(shù)資料
型號: HYB25D512400AR-7
英文描述: ?512Mb (stacked 256Mb) ?
中文描述: ?的512Mb(堆疊256Mb的)?
文件頁數(shù): 76/76頁
文件大小: 1218K
代理商: HYB25D512400AR-7
2002-05-06
Page 76 of 76
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
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Critical components
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相關(guān)PDF資料
PDF描述
HYB25D512400AT-8 ?512Mb (128Mx4) DDR200 (2-2-2) ?
HYB25D512800AT-6 ?512Mb (64Mx8) DDR333 (2.5-3-3)?
HYB25D512800AT-7 ?512Mb (64Mx8) DDR266A (2-3-3)?
HYB25D512800AT-8 ?512Mb (64Mx8) DDR200 (2-2-2)?
HYB25M128160C-653 RAMBUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25D512400BR-7 制造商:Infineon Technologies AG 功能描述:128M X 4 DDR DRAM MODULE, P66 Pin Plastic SMT
HYB25D512400CE-5 制造商:Infineon Technologies AG 功能描述:
HYB25D512800CE-5 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB25D512800CE-6 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB25DC512160CE-5 制造商:Infineon Technologies AG 功能描述: 制造商:QIMONDA 功能描述: