參數(shù)資料
型號(hào)： HYB25D512400AR-7
英文描述： ?512Mb (stacked 256Mb) ?
中文描述： ？的512Mb（堆疊256Mb的）？
文件頁(yè)數(shù)： 60/76頁(yè)
文件大?。?/td> 1218K
代理商： HYB25D512400AR-7
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Page 60 of 76
2002-05-06
t
RFC
Auto-refresh to Active/Auto-refresh command
period
80
75
72
ns
1-4
t
RCD
Active to Read or
W
rite delay
20
20
18
ns
1-4
t
RP
Precharge command period
20
20
18
ns
1-4
t
RAP
Active to Autoprecharge delay
20
20
18
ns
1-4
t
RRD
Active bank A to Active bank B command
15
15
12
ns
1-4
t
W
R
W
rite recovery time
15
15
15
ns
1-4
t
DAL
Auto precharge write recovery
+
precharge time
(twr/tck)
+
(trp/tck)
t
CK
1-4,
9
t
W
TR
Internal write to read command delay
1
1
1
t
CK
1-4
t
X
S
N
R
E
xit self-refresh to non-read command
80
75
75
ns
1-4
t
X
SRD
E
xit self-refresh to read command
200
200
200
t
CK
1-4
t
R
E
FI
Average Periodic Refresh Interval (40
9
6 refresh
commands per 64ms refresh period)
15.6
15.6
15.6
μ
s
1-4, 8
1. Input slew rate
>
= 1V/ns for DDR266
&
DDR333 and = 1V/ns for DDR200.
2. The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for
signals other than CK/CK, is V
R
E
F.
CK/CK slew rate are
>
= 1.0 V/ns
3. Inputs are not recognized as valid until V
R
E
F
stabilizes.
4. The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (
N
ote 3) is V
TT
.
5. t
HZ
and t
L
Z
transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a spe-
cific voltage level, but specify when the device is no longer driving (
HZ
), or begins driving (L
Z
).
6. The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
7. The specific requirement is that DQS be valid (
H
I
GH
, LO
W
, or some point on a valid transition) on or before this CK edge. A valid
transition is defined as monotonic and meeting the input slew rate specifications of the device.
W
hen no writes were previously in
progress on the bus, DQS will be transitioning from
H
i-
Z
to logic LO
W
. If a previous write was in progress, DQS could be
H
I
GH
,
LO
W
, or transitioning from
H
I
GH
to LO
W
at this time, depending on t
DQSS
.
8. A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
9
. For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time.
10. These parameters guarantee device timing, but they are not necessarily tested on each device
11. Fast slew rate
>
= 1.0 V/ns , slow slew rate
>
= 0.5 V/ns and
<
1V/ns for command/address and CK
&
CK slew rate
>
1.0 V/ns, mea-
sured between VO
H
(ac) and VOL(ac)
Electrical Characteristics & AC Timing - Absolute Specifications
(0
°
C
≤
T
A
≤
70
°
C
;
V
DDQ
= 2.5V
±
0.2V; V
DD
= 2.5V
±
0.2V, See AC Characteristics)
(Part 2 of 2)
Symbol
Parameter
DDR200
-8
DDR266A
-7
DDR333
-6
Unit
N
otes
Min
Max
Min
Max
Min
Max
相關(guān)PDF資料
PDF描述
HYB25D512400AT-8 ?512Mb (128Mx4) DDR200 (2-2-2) ?
HYB25D512800AT-6 ?512Mb (64Mx8) DDR333 (2.5-3-3)?
HYB25D512800AT-7 ?512Mb (64Mx8) DDR266A (2-3-3)?
HYB25D512800AT-8 ?512Mb (64Mx8) DDR200 (2-2-2)?
HYB25M128160C-653 RAMBUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25D512400BR-7 制造商:Infineon Technologies AG 功能描述:128M X 4 DDR DRAM MODULE, P66 Pin Plastic SMT
HYB25D512400CE-5 制造商:Infineon Technologies AG 功能描述:
HYB25D512800CE-5 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線(xiàn)串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
HYB25D512800CE-6 功能描述:IC DDR SDRAM 512MBIT 66TSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線(xiàn)串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
HYB25DC512160CE-5 制造商:Infineon Technologies AG 功能描述: 制造商:QIMONDA 功能描述:
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