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參數(shù)資料
| 型號： | HY64UD16322A |
| 廠商： | Hynix Semiconductor Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| 中文描述： | 200萬× 16位低功耗1T/1C偽靜態(tài)存儲器 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 269K |
| 代理商： | HY64UD16322A |
HY64UD16322A Series
6
Revision 1.1
May. 2003
STANDBY MODE CHARACTERISTICS
STATE DIAGRAM
1. Supply power with CS2 high.
2. Maintain stable power for longer than 200
μ
s.
Power-Up Sequence
1. Keep CS2 low state.
Deep power down mode is maintained while CS2 is low state.
Deep Power Down Entry Sequence
1. Keep CS2 high state.
2. Maintain stable power for longer than 200
μ
s.
Deep Power Down Exit Sequence
Power On
μ
s
Wait 200
μ
μ
s
s
Active
Standby
Mode
Deep Power
Down Mode
/ CS1=V
IL
, CS2=V
IH
,
/UB&/LB
≠
V
IH
CS2=V
IL
CS2=V
IL
P
S
CS2=V
IH
, /CS1=V
IH
or /UB,/LB=V
IH
D
S
Deep Power Down
Entry Sequence
CS2=V
IH
Mode
Memory Cell Data
Standby Current
[
μ
A]
Wait Time
[
μ
s]
Standby
Valid
100 / 70ns
0
Deep Power Down
Invalid
2
200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY64UD16322A-DF70E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY86-12 | 90 Degree Hybrid 0.82-0.90 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16322A-DF70E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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