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參數(shù)資料
| 型號： | HY64UD16322A |
| 廠商： | Hynix Semiconductor Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| 中文描述： | 200萬× 16位低功耗1T/1C偽靜態(tài)存儲器 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 269K |
| 代理商： | HY64UD16322A |
HY64UD16322A Series
5
Revision 1.1
May. 2003
AC TEST LOADS
Note
1. Including jig and scope capacitance.
AC CHARACTERISTICS
Vdd=2.7V~3.3V, Vddq=2.7V~3.3V, T
A =
-25
°
C to 85
°
C(E) / -40
°
C to 85
°
C(I), unless otherwise specified
C
L
1
=50 pF
D
OUT
R
L
=50 Ohm
V
L
=0.5*Vddq
Z
0
=50 Ohm
AC TEST CONDITIONS
T
A =
-25
°
C to 85
°
C(E) / -40
°
C to 85
°
C(I), unless otherwise specified
Parameter
Input Pulse Level
Input Rising and Fall Time
Input Timing Reference Level
Output Timing Reference Level
Value
0.4V to 2.2V
5ns
1.5V
0.5*Vddq
Output Load
See Below
#
Parameter
1
2
3
4
5
6
7
8
9
10
11
12
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
/LB, /UB Access Time
Chip Select to Output in Low Z
Output Enable to Output in Low Z
/LB, /UB Enable to Output in Low Z
Chip Disable to Output in High Z
Out Disable to Output in High Z
/LB, /UB Disable to Output in High Z
Output Hold from Address Change
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
tRC
tAA
tACS
tOE
tBA
tCLZ
tOLZ
tBLZ
tCHZ
tOHZ
tBHZ
tOH
Read Cycle
13
14
15
16
17
18
19
20
21
22
23
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
/LB, /UB Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tCW
tAW
tBW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle
Min.
70
-
-
-
-
10
5
10
0
0
0
5
Max.
-
70
70
20
70
-
-
-
10
10
10
-
70
60
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
-
20
-
-
-
-70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY64UD16322A-DF70E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY86-12 | 90 Degree Hybrid 0.82-0.90 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16322A-DF70E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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