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參數(shù)資料
| 型號： | HY64UD16322A |
| 廠商： | Hynix Semiconductor Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| 中文描述： | 200萬× 16位低功耗1T/1C偽靜態(tài)存儲器 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 269K |
| 代理商： | HY64UD16322A |
HY64UD16322A Series
4
Revision 1.1
May. 2003
CAPACITANCE
(Temp = 25
°
C, f=1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance(ADD, /CS1, CS2, /WE, /OE, /UB, /LB)
Output Capacitance(I/O)
Unit
pF
pF
Max.
8
10
Condition
V
IN
=0V
V
I/O
=0V
Note : These parameters are sampled and not 100% tested
DC ELECTRICAL CHARACTERISTICS
Note 1. VIL=-1.5V for pulse width less than 10ns
Undershoot is sampled, not 100% tested.
RECOMMENDED DC OPERATING CONDITION
Symbol
Vdd
Vddq
Parameter
Min.
2.7
2.7
Core Supply Voltage
I/O Supply Voltage
Unit
V
V
Typ.
3.0
3.0
Max.
3.3
3.3
V
SS
V
IH
V
IL
Ground
Input High Voltage
Input Low Voltage
0
V
V
V
-
-
-
0
2.2
-0.2
1
Vddq+0.3
0.6
Sym.
I
LI
Parameter
Min.
-1
Input Leakage Current
Unit
μ
A
Max.
1
Test Condition
V
SS
≤
V
IN
≤
Vdd
V
SS
≤
V
OUT
≤
Vddq,
/CS1=V
IH
, CS2=V
IH
,
/OE=V
IH
or /WE=V
IL
I
LO
Output Leakage Current
-1
μ
A
1
I
CC
Operating Power Supply Current
-
mA
3
/CS1=V
IL
, CS2=V
IH
,
V
IN
=V
IH
or V
IL
, I
I/O
=0mA
I
CC1
Average Operating Current
-
/CS1=V
IL
, CS2=V
IH
,
V
IN
=V
IH
or V
IL
, Cycle Time=Min.
100% Duty, I
I/O
=0mA
/CS1,CS2=V
IH
or /UB,/LB= V
IH
-
mA
5
/CS1
≤
0.2V, CS2
≥
Vdd-0.2V,
V
IN
≤
0.2V or V
IN
≥
Vdd-0.2V,
Cycle Time=1
μ
s
.
100% Duty, I
I/O
=0mA
I
SB
TTL Standby Current
-
mA
0.5
I
SB1
Standby Current(CMOS Input)
/CS1,CS2
≥
Vdd-0.2V,
/UB,/LB
≤
0.2V or /UB,/LB
≥
Vdd-0.2V,
otherwise CS2,/UB,/LB
≥
Vdd-0.2V,
/CS1
≤
0.2V or /CS1
≥
Vdd-0.2V
V
OL
Output Low Voltage
-
V
0.4
I
OL
=2.1mA
V
OH
Output High Voltage
2.4
V
-
I
OH
=-1.0mA
I
CC2
I
DPD
Deep Power Down
-
μ
A
2
CS2
≤
V
SS+
0.2V
-
μ
A
100
mA
25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY64UD16322A-DF70E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY86-12 | 90 Degree Hybrid 0.82-0.90 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16322A-DF70E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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