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參數(shù)資料
| 型號(hào)： | HY5S6B6D |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4Banks x1M x 16bits Synchronous DRAM |
| 中文描述： | 4Banks x1M x 16位同步DRAM |
| 文件頁數(shù)： | 6/27頁 |
| 文件大小： | 368K |
| 代理商： | HY5S6B6D |
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Rev 0.3 / July 2004
6
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1
0
BA0
0
A11
0
A10
0
A9
A8
0
A7
0
A6
A5
A4
A3
BT
A2
A1
A0
OP Code
CAS Latency
Burst Length
OP Code
A9
0
1
Write Mode
Burst Read and Burst Write
Burst Read and Single Write
Burst Type
A3
Burst Type
0
Sequential
1
Interleave
Burst Length
A2
A1
A0
Burst Length
A3 = 0
A3=1
0
0
0
0
1
1
1
1
0
0
1
1
0
1
1
0
2
2
4
4
1
1
8
8
0
0
Reserved
Reserved
0
1
1
1
Reserved
Reserved
0
Reserved
Reserved
1
Full Page
Reserved
CAS Latency
A6
0
0
0
0
1
1
1
1
A5
0
0
1
1
0
0
1
1
A4
0
1
0
1
0
1
0
1
CAS Latency
Reserved
1
2
3
Reserved
Reserved
Reserved
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5S6B6DLF-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLF-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-BE | 4Banks x1M x 16bits Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5S6B6DLF-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLF-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
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