參數(shù)資料
型號(hào): HY5S6B6DSF-BE
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 4Banks x1M x 16bits Synchronous DRAM
中文描述: 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
封裝: 0.80 MM PITCH, FBGA-54
文件頁數(shù): 1/27頁
文件大?。?/td> 368K
代理商: HY5S6B6DSF-BE
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.3 / July 2004
1
HY5S6B6D(L/S)F(P)-xE
4Banks x1M x 16bits Synchronous DRAM
Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No.
History
Draft Date
Remark
0.1
Initial Draft
Sep. 2003
Preliminary
0.2
Append Super-Low Power Group to the Data-sheet
Oct. 2003
Preliminary
0.3
Changed DC Characteristics
Nov. 2003
Changed Package Information
July 2004
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HY5S6B6DSFP-BE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSFP-SE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
HY5S6B6DSF-SE 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM
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