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參數(shù)資料
| 型號： | HY5S6B6D |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4Banks x1M x 16bits Synchronous DRAM |
| 中文描述： | 4Banks x1M x 16位同步DRAM |
| 文件頁數(shù)： | 18/27頁 |
| 文件大小： | 368K |
| 代理商： | HY5S6B6D |
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Rev 0.3 / July 2004
18
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
CKE Enable(CKE) Truth TABLE
(Sheet 2 of 2)
Note :
1. For the given current state CKE must be low in the previous cycle.
2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting power down mode,
a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high.
3. The address inputs depend on the command that is issued.
4. The Precharge Power Down mode, the Self Refresh mode, and the Mode Register Set can only be entered
from the all banks idle state.
5. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously.
When exiting deep power down mode, a NOP (or Device Deselect) command is required on the first positive edge of
clock after CKE goes high and is maintained for a minimum 200usec.
Current
State
CKE
Command
Action
Notes
Previous
Cycle
Current
Cycle
CS
RAS
CAS
WE
BA0,
BA1
A11-
A0
All
Banks
Idle
H
H
H
X
X
X
Refer to the idle State section
of the Current State
Truth Table
3
H
H
L
H
X
X
3
H
H
L
L
H
X
3
H
H
L
L
L
H
X
X
Auto Refresh
H
H
L
L
L
L
OP CODE
Mode Register Set
4
H
L
H
X
X
X
Refer to the idle State section
of the Current State
Truth Table
3
H
L
L
H
X
X
3
H
L
L
L
H
X
3
H
L
L
L
L
H
X
X
Entry Self Refresh
4
H
L
L
L
L
L
OP CODE
Mode Register Set
L
X
X
X
X
X
X
X
Power Down
4
Any State
other than
listed above
H
H
X
X
X
X
X
X
Refer to operations of
the Current State
Truth Table
H
L
X
X
X
X
X
X
Begin Clock Suspend
next cycle
L
H
X
X
X
X
X
X
Exit Clock Suspend
next cycle
L
L
X
X
X
X
X
X
Maintain Clock Suspend
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5S6B6DLF-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLF-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-BE | 4Banks x1M x 16bits Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5S6B6DLF-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLF-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
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