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參數(shù)資料
| 型號(hào)： | HY5S6B6D |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4Banks x1M x 16bits Synchronous DRAM |
| 中文描述： | 4Banks x1M x 16位同步DRAM |
| 文件頁數(shù)： | 13/27頁 |
| 文件大小： | 368K |
| 代理商： | HY5S6B6D |
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Rev 0.3 / July 2004
13
HY5S6B6D(L/S)F(P)-xE
4Banks x 1M x 16bits Synchronous DRAM
CURRENT STATE TRUTH TABLE
(Sheet 2 of 4)
Current
State
Command
Action
Notes
CS RAS CAS WE
BA0/
BA1
A11-A0
Description
Read
H
X
X
X
X
X
Device Deselect
Continue the Burst
Write
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
13,14
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
13
L
L
H
L
BA
X
Precharge
Termination Burst: Start
the Precharge
10
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
4
L
H
L
L
BA
Col Add.
A10
Write/WriteAP
Termination Burst: Start
Write(optional AP)
8
L
H
L
H
BA
Col Add.
A10
Read/ReadAP
Termination Burst: Start
Read(optional AP)
8,9
L
H
H
H
X
X
No Operation
Continue the Burst
H
X
X
X
X
X
Device Deselect
Continue the Burst
ILLEGAL
Read with
Auto
Precharge
L
L
L
L
OP CODE
Mode Register Set
13,14
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
13
L
L
H
L
BA
X
Precharge
ILLEGAL
4,12
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
4,12
L
H
L
L
BA
Col Add. A10
Write/WriteAP
ILLEGAL
12
L
H
L
H
BA
Col Add. A10
Read/ReadAP
ILLEGAL
12
L
H
H
H
X
X
No Operation
Continue the Burst
H
X
X
X
X
X
Device Deselect
Continue the Burst
Write with
Auto
Precharge
L
L
L
L
OP CODE
Mode Register Set
ILLEGAL
13,14
L
L
L
H
X
X
Auto or Self Refresh ILLEGAL
13
L
L
H
L
BA
X
Precharge
ILLEGAL
4,12
L
L
H
H
BA
Row Add.
Bank Activate
ILLEGAL
4,12
L
H
L
L
BA
Col Add. A10
Write/WriteAP
ILLEGAL
12
L
H
L
H
BA
Col Add. A10
Read/ReadAP
ILLEGAL
12
L
H
H
H
X
X
No Operation
Continue the Burst
H
X
X
X
X
X
Device Deselect
Continue the Burst
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5S6B6DLF-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-BE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLF-SE | 4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-BE | 4Banks x1M x 16bits Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5S6B6DLF-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLFP-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DLF-SE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
| HY5S6B6DSF-BE | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4Banks x1M x 16bits Synchronous DRAM |
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