參數資料
型號: HY5PS12821F-4
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR2 SDRAM
中文描述: 512Mb DDR2 SDRAM芯片
文件頁數: 28/35頁
文件大?。?/td> 624K
代理商: HY5PS12821F-4
Rev. 1.0 / Feb. 2005
28
1
HY5PS12421(L)F
HY5PS12821(L)F
HY5PS121621(L)F
Fig. -b Illustration of tangent line for tIS,tDS
CK, DQS
V
DDQ
V
IH
(ac)min
V
IH
(dc)min
V
REF
(dc)
V
IL
(dc)max
V
IL
(ac)max
Vss
Delta TF
Delta TR
V
REF
to ac
region
tangent
line
Tangent
line
t
IS
,
t
DS
CK, DQS
Nomial
line
nominal
line
Delta TR
Tangent line[V
IH
(ac)min-V
REF
(dc)]
Setup Slew Rate
Rising Signal
=
Tangent line[V
REF
(dc)-V
IL
(ac)max]
Delta TF
Setup Slew Rate
Falling Signal
=
t
IH
,
t
DH
t
IS
,
t
DS
t
IH
,
t
DH
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HY5PS121621F 512Mb DDR2 SDRAM
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HY5PS121621LF-3 512Mb DDR2 SDRAM
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