參數(shù)資料
型號: HY5DU12422ALT-X
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR SDRAM
中文描述: 產(chǎn)品512Mb DDR SDRAM
文件頁數(shù): 30/33頁
文件大?。?/td> 379K
代理商: HY5DU12422ALT-X
Rev. 0.0/Feb. 2003 30
HY5DU12422A(L)T
HY5DU12822A(L)T
HY5DU121622A(L)T
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Note :
1.
This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2.
Data sampled at the rising edges of the clock : A0~A12, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE.
3.
For command/address input slew rate >=1.0V/ns
4.
For command/address input slew rate >=0.5V/ns and <1.0V/ns
This derating table is used to increase tIS/tIH in case where the input slew-rate is below 0.5V/ns.
Input Setup / Hold Slew-rate Derating Table.
Parameter
Symbol
DDR400 (D4)
DDR400 (D43)
Unit
Note
Min
Max
Min
Max
Input Pulse Width
t
IPW
2.2
-
2.2
-
ns
6
Write DQS High Level Width
t
DQSH
0.35
-
0.35
-
CK
Write DQS Low Level Width
t
DQSL
0.35
-
0.35
-
CK
Clock to First Rising edge of DQS-In
t
DQSS
0.72
1.28
0.72
1.28
CK
DQS falling edge to CK setup time
t
DSS
0.2
0.2
CK
DQS falling edge hold time from CK
t
DSH
0.2
0.2
CK
Data-In Setup Time to DQS-In (DQ & DM)
t
DS
0.4
-
0.4
-
ns
6,7,11
,
12,13
Data-in Hold Time to DQS-In (DQ & DM)
t
DH
0.4
-
0.4
-
ns
DQ & DM Input Pulse Width
t
DIPW
1.75
-
1.75
-
ns
6
Read DQS Preamble Time
t
RPRE
0.9
1.1
0.9
1.1
CK
Read DQS Postamble Time
t
RPST
0.4
0.6
0.4
0.6
CK
Write DQS Preamble Setup Time
t
WPRES
0
-
0
-
CK
Write DQS Preamble Hold Time
t
WPREH
0.25
-
0.25
-
CK
Write DQS Postamble Time
t
WPST
0.4
0.6
0.4
0.6
CK
Mode Register Set Delay
t
MRD
2
-
2
-
CK
Exit Self Refresh to Any Execute Command
t
XSC
200
-
200
-
CK
8
Average Periodic Refresh Interval
t
REFI
-
7.8
-
7.8
us
Input Setup / Hold Slew-rate
Delta tIS
Delta tIH
V/ns
ps
ps
0.5
0
0
0.4
+50
0
0.3
+100
0
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