參數(shù)資料
型號: HY5DU12422ALT-X
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR SDRAM
中文描述: 產品512Mb DDR SDRAM
文件頁數(shù): 23/33頁
文件大?。?/td> 379K
代理商: HY5DU12422ALT-X
Rev. 0.0/Feb. 2003 23
HY5DU12422A(L)T
HY5DU12822A(L)T
HY5DU121622A(L)T
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. V
DDQ
must not exceed the level of V
DD
.
2. V
IL
(min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed +/- 2% of the DC value.
DC CHARACTERISTICS I
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note
:
1. VIN = 0 to 2.7V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.7V
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
o
C
Storage Temperature
T
STG
-55 ~ 125
o
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
relative to V
SS
V
DD
-0.5 ~ 3.6
V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
I
OS
50
mA
Power Dissipation
P
D
1
W
Soldering Temperature T Time
T
SOLDER
260 T 10
o
C T sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
2.5
2.6
2.7
V
Power Supply Voltage
V
DDQ
2.5
2.6
2.7
V
1
Input High Voltage
V
IH
V
REF
+ 0.15
-
V
DDQ
+ 0.3
V
Input Low Voltage
V
IL
-0.3
-
V
REF
- 0.15
V
2
Termination Voltage
V
TT
V
REF
- 0.04
V
REF
V
REF
+ 0.04
V
Reference Voltage
V
REF
0.49*VDDQ
0.5*VDDQ
0.51*VDDQ
V
3
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
I
LI
-2
2
uA
1
Output Leakage Current
I
LO
-5
5
uA
2
Output High Voltage
V
OH
V
TT
+ 0.76
-
V
I
OH
= -15.2mA
Output Low Voltage
V
OL
-
V
TT
- 0.76
V
I
OL
= +15.2mA
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HY5DU12422AT-X 512Mb DDR SDRAM
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