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參數(shù)資料
| 型號： | HY57W2A1620HCST-B |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內(nèi)存 |
| 文件頁數(shù)： | 6/24頁 |
| 文件大?。?/td> | 221K |
| 代理商： | HY57W2A1620HCST-B |
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T
HY5W26CF / HY57W281620HCT
Rev. 1.2 / Nov. 01
7
BASIC FUNCTIONAL DESCRIPTION (Continued)
Extended Mode Register
TCSR
(Temperature Compensated Self Refresh)
PASR
(Partial Array Self Refresh)
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
1
0
0
0
0
0
0
0
0
0
TCSR
PASR
A4 A3
Temperature
o
C
0 0
70
45
15
85
0 1
1 0
1 1
A2 A1 A0
Self Refresh Coverage
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
All Banks
Half of Total Bank (BA1=0)
Quarter of Total Bank (BA1=BA0=0)
Reserved
Reserved
One Eighth of Total Bank (Row Address MSB=0)
One Sixteenth of Total Bank (Row Address 2 MSBs=0)
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57W2A1620HCST-H | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY57W2A1620HCST-P | x16 SDRAM |
| HY57W2A1620HCST-S | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY5W26CF-P | x16 SDRAM |
| HY5W26CF-S | SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DS113222FM | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
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