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參數(shù)資料
| 型號： | HY57W2A1620HCLT-B |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內(nèi)存 |
| 文件頁數(shù)： | 5/24頁 |
| 文件大?。?/td> | 221K |
| 代理商： | HY57W2A1620HCLT-B |
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T
HY5W26CF / HY57W281620HCT
Rev. 1.2 / Nov. 01
6
BASIC FUNCTIONAL DESCRIPTION
Mode Register
CAS Latency
Burst Type
Burst Length
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
0
0
0
0
0
0
CAS Latency
BT
Burst Length
A6 A5 A4
CAS Latency
0 0 0
Reserved
1
2
3
Reserved
Reserved
Reserved
Reserved
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
A3
Burst Type
0
1
Sequential
Interleave
A2 A1 A0
Burst Length
A3 = 0
A3=1
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
1
2
4
8
Reserved
Reserved
Reserved
Full Page
1
2
4
8
Reserved
Reserved
Reserved
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57W2A1620HCLT-H | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY57W2A1620HCLT-P | x16 SDRAM |
| HY57W2A1620HCLT-S | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
| HY57W2A1620HCST-B | x16 SDRAM |
| HY57W2A1620HCST-H | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DS113222FM | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-33 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-36 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
| HY5DS113222FM-4 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512M(16Mx32) GDDR SDRAM |
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