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參數資料
| 型號： | HY57W2A1620HCLT-B |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內存 |
| 文件頁數： | 15/24頁 |
| 文件大?。?/td> | 221K |
| 代理商： | HY57W2A1620HCLT-B |
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T
HY5W26CF / HY57W281620HCT
Rev. 1.2 / Nov. 01
16
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
TBD
o
C
o
C
V
V
V
mA
W
o
C
.
Sec
Storage Temperature
T
STG
-55 ~ 125
Voltage on Any Pin relative to V
SS
V
IN
,
V
OUT
-1.0 ~ 4.6
Voltage on V
DD
relative to V
SS
V
DD
-1.0 ~ 4.6
Voltage on V
DDQ
relative to V
SS
V
DDQ
-1.0 ~ 4.6
Short Circuit Output Current
I
OS
50
Power Dissipation
PD
1
Soldering Temperature
.
Time
T
SOLDER
260
.
10
Note
: Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION
(TA= -25 to 85 )
Parameter
Symbol
Min
Typ
Max
Unit
Note
Power Supply Voltage
V
DD
2.3
1.65
2.5
-
-
-
2.7
2.7
V
V
V
V
1
Power Supply Voltage
V
DDQ
1, 2
Input High Voltage
V
IH
0.8*V
DDQ
V
DDQ+
0.3
1, 2, 3
Input Low Voltage
V
IL
-0.3
0.2*V
DDQ
1, 2, 3
Note : 1. All Voltages are referenced to V
SS
= 0V
2. V
DDQ
must not exceed the level of V
DD
3. Internal V
REF
= 0.9V
AC OPERATING TEST CONDITION
(TA= -25 to 85, V
DD =
2.5V, V
SS
= 0V) )
Parameter
Symbol
Value
Unit
Note
AC Input High/Low Level Voltage
VIH / VIL
Vtrip
tR / tF
Voutref
TBD
0.9
1
0.9
TBD
V
V
ns
V
pF
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
CL
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|---|---|
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| HY57W2A1620HCLT-S | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
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| HY57W2A1620HCST-H | SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC |
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