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參數(shù)資料
| 型號： | HSK2474J |
| 廠商： | HSMC CORP. |
| 英文描述： | N-Channel MOSFETs |
| 中文描述： | N溝道MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 51K |
| 代理商： | HSK2474J |
HI-SINCERITY
MICROELECTRONICS CORP.
HSK2474J
N - Channel MOSFETs
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 1/5
HSMC Product Specification
Description
Dynamic dv/dt Rating
Repetitive Avalanche rated
Surface Mount
Straigh Lead
Available in Tape&Reel
Fast Switching
Ease of Paralleling
Features
Low Drain-Source ON Resistance - R
DS(ON)
=1.2
(Typ.)@ V
DS
=10V, I
D
=1.3A
High Forward Transfer Admittance -|Yfs|=1.2S@V
DS
=50V, I
D
=1.3A
Low Leakage Current - I
DSS
=100uA (Max.)@V
DS
=200V
Enhancement-Mode - V
th
= 2.0~4.0V@V
DS
=4V, I
D
=250uA
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 25 W
Maximum Voltages and Currents
Drain to Source Breakdown Voltage................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source Voltage....................................................................................................
±
20 V
Drain Current (Cont.)......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
R
θ
JC
R
θ
JA
Max.
5
50
Units
°
C/W
°
C/W
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