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參數(shù)資料
| 型號： | HSB857D |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | HSB857D |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB857D
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 1/4
HSB857D
HSMC Product Specification
Description
Low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature.............................................................................................. -50~+150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).....................................................................................1.5 W
Total Power Dissipation (Tc=25
°
C) ......................................................................................10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.......................................................................................-60 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current.............................................................................................................. -3 A
IC Collector Current (IC Peak)........................................................................................... -4.5 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Min.
-60
-50
-5
-
-
-
-
-
170
-
Typ.
-
-
-
-
-
-
-0.3
-
-
15
Max.
-
-
-
-1
-1
-1
-1
-1.5
400
-
Unit
V
V
V
uA
uA
uA
V
V
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-50V
VCE=-40V
VEB=-4V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-500mA, VCE=-3V
VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
TO-126ML
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