參數(shù)資料
型號: HS1-81C55RH-Q
廠商: INTERSIL CORP
元件分類: DRAM
英文描述: Radiation Hardened 256 x 8 CMOS RAM
中文描述: 256 X 8 MULTI-PORT SRAM, CDIP40
封裝: SIDE BRAZED, CERAMIC, DIP-40
文件頁數(shù): 11/11頁
文件大?。?/td> 122K
代理商: HS1-81C55RH-Q
11
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
Die Characteristics
DIE DIMENSIONS:
222mils x 202mils x 14mils
±
1mil (Die Thickness)
INTERFACE MATERIALS:
Glassivation:
Type: SiO2
Thickness: 8k
±
1k
Top Metallization:
Type: AlSi
Thickness: 11k
±
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
Metallization Mask Layout
HS-81C55RH, HS-81C56RH
TIMER OUT (6)
IO/M (7)
CE OR CE (8)
A
A
A
A
(
(
(
(
(
(
(
(
(
(
(
A
G
P
P
P
P
P
P
RD (9)
WR (10)
ALE (11)
AD0 (12)
AD1 (13)
AD2 (14)
(34) PB5
(33) PB4
(32) PB3
(31) PB2
(30) PB1
(29) PB0
(28) PA7
(27) PA6
HS-81C55RH, HS-81C56RH
相關(guān)PDF資料
PDF描述
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