參數(shù)資料
型號： HS1-65647RH
廠商： HARRIS SEMICONDUCTOR
元件分類： DRAM
英文描述： Radiation Hardened 8K x 8 SOS CMOS Static RAM
中文描述： 8K X 8 STANDARD SRAM, 50 ns, CDIP28
文件頁數(shù)： 3/16頁
文件大?。?/td> 110K
代理商： HS1-65647RH
826
Specifications HS-65647RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Typical Derating Factor. . . . . . . . . . . . 3mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
28 Lead SBDIP Package. . . . . . . . . . . . .
28/36 Lead Ceramic Flatpack Package. .
Maximum Package Power Dissipation at +125
o
C Ambient
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . . . . . 0.94W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . .22.2mW/C
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . .18.7mW/C
θ
JA
θ
JC
45
o
C/W
53.4
o
C/W
8.0
o
C/W
7.4
o
C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range (VDD) . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . 0V to +0.2VDD
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . .0.8VDD to VDD
Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . .40ns Max.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
High Level Output
Voltage
VOH
VDD = 4.5V, IO = -5mA
VI = VDD or GND
1, 2, 3
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
VDD-
0.4
-
V
Low Level Output
Voltage
VOL
VDD = 4.5V, IO = 8.0mA
VI = VDD or GND
1, 2, 3
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-
0.4
V
High Impedance Output
Leakage Current
IOZL or
IOZH
VDD = 5.5V, VO = GND or
VDD, VI = VDD or GND
E1 = VDD, E2 = 0V
1, 3
-55
o
C, +25
o
C
-10
10
μ
A
2
+85
o
C
-30
30
μ
A
2
+125
o
C
-60
60
μ
A
Input Leakage Current
IIH or IIL
VDD = 5.5V, VI = VDD or
GND
1, 2, 3
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-1.0
1.0
μ
A
Standby Supply Current
IDDSB
(Note 3)
VDD = 5.5V, IO = 0mA,
VI = VDD or GND
E1 = VDD, E2 = 0V
1, 3
-55
o
C, +25
o
C
-
500
μ
A
2
+85
o
C
-
4
mA
2
+125
o
C
-
10
mA
Enable Supply Current
IDDEN
VDD = 5.5V, IO = 0mA,
VI = VDD or GND
E1 = 0.0V, E2 = VDD
3
-55
o
C
-
77
mA
1
+25
o
C
-
73
mA
2
+85
o
C, +125
o
C
-
64
mA
Operating Supply
Current (Note 2)
IDDOP
VDD = 5.5V, IO = 0mA,
VI = VDD or GND,
E2 = VDD, E1 = 0V,
f = 2MHz
3
-55
o
C
-
100
mA
1
+25
o
C
-
86
mA
2
+85
o
C, +125
o
C
-
75
mA
Data Retention Supply
Current
IDDDR
VDD = 2.0V, IO = 0mA,
VI = VDD or GND
E1 = VDD, E2 = 0V
1, 3
-55
o
C, +25
o
C
-
50
μ
A
2
+85
o
C
-
1
mA
2
+125
o
C
-
4
mA
Functional Tests
FT
VDD = 4.5V and 5.5V
VI = VDD or GND, f = 1MHz
7, 8A, 8B
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-
-
-
Noise Immunity
Functional Test
FN
VDD = 4.5, VIL = 0.2 VDD
VIH = 0.8 VDD, f = 1MHz
7, 8A, 8B
-55
o
C, +25
o
C,
+85
o
C, +125
o
C
-
-
-
NOTES:
1. All voltages referenced to device GND.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
3. In order for this device to be in low power standby mode. E2 must be disabled (low).
Spec Number
518729
相關(guān)PDF資料
PDF描述
HS9-65647RH Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9A-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS9-65647RH-Q Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-82C52RH-8 UART
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HS1-65647RH/PROTO 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-65647RH-8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-65647RH-Q 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened 8K x 8 SOS CMOS Static RAM
HS1-6564RH-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Synchronous SRAM Module
HS16-5N 功能描述:旋鈕開關(guān) 12 AMP 5P 2-11 POS RoHS:否 制造商:C&K Components 位置數(shù)量:5 卡片組數(shù)量: 每卡片組極數(shù):2 電流額定值:250 mA 電壓額定值:125 V 指數(shù)角: 觸點類型: 觸點形式:DPST 端接類型:Solder 安裝類型:Panel 觸點電鍍:Silver
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*